A 3.5 GHz Low-Noise Amplifier in 0.35 μm GaN HEMT on Si-Substrate for WiMAX Applications
Hsuan-ling Kao, Bai-Hong Wei, and Yi-Chun Lee
Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan
Abstract—This paper presents an 3.5 GHz low noise amplifier that uses a two-stage configuration, using 0.35 m AlGaN/GaN HEMT on silicon substrate technology. The first stage has a cascode topology to achieve high gain, better stability and well reverse isolation. The second stage has a RC-feedback topology for wideband matching. The T-matching network is used for broadband output matching. The results show a maximum gain of 14.4 dB, a minimum noise figure of 3.3 dB, and an input/output return loss greater than 10 dB. With good power-handling capabilities of GaN HEMT devices, the third-order input intercept point at 3.5 GHz is +2.5 dBm and the unit consumes 170 mW of power. Good agreement between the simulated and measured results is found.
Index Terms—low-noise amplifier (LNA), AlGaN/GaN HEMT on Si, minimum noise figure (NFmin)
Cite: Hsuan-ling Kao, Bai-Hong Wei, and Yi-Chun Lee, "A 3.5 GHz Low-Noise Amplifier in 0.35 μm GaN HEMT on Si-Substrate for WiMAX Applications," International Journal of Electronics and Electrical Engineering, Vol. 3, No. 1, pp. 61-65, February 2015. doi: 10.12720/ijeee.3.1.61-65
Index Terms—low-noise amplifier (LNA), AlGaN/GaN HEMT on Si, minimum noise figure (NFmin)
Cite: Hsuan-ling Kao, Bai-Hong Wei, and Yi-Chun Lee, "A 3.5 GHz Low-Noise Amplifier in 0.35 μm GaN HEMT on Si-Substrate for WiMAX Applications," International Journal of Electronics and Electrical Engineering, Vol. 3, No. 1, pp. 61-65, February 2015. doi: 10.12720/ijeee.3.1.61-65
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