Design and Analysis of an X-Band Isolator Coupled to an Accelerating Manifold
Junaid Zafar 1, Tasneem Zafar 2,
Andrew A. Gibson 3, and
Haroon Zafar 4
1. Faculty of Engineering, Government College University, Lahore, Pakistan
2. Department of Economics, Government College University, Lahore, Pakistan
3. School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, UK
4. Tissue Optics and Microcirculation Imaging Research Group, National University of Ireland, Galway, Ireland
2. Department of Economics, Government College University, Lahore, Pakistan
3. School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, UK
4. Tissue Optics and Microcirculation Imaging Research Group, National University of Ireland, Galway, Ireland
Abstract—An X-band isolator was designed, simulated and developed for a colossal power X-ray beam emitter assembly. The developed isolator has been used to absorb reflection losses to protect the X-band magnetron source during experimental verification of emitter assembly characteristics. A finite element magnetostatic/microwave procedure is used to implement the phase control section of a 3-port isolator. This study decrees that the isolator has an operating bandwidth from 9.8-10.4GHz, manages peak power of 0.60MW, and an average power rating of 1.6KW. A minimum of 20-dB isolation with an insertion loss of less than 0.2dB over the operating frequency band was achieved. The microwave S-parameters computations fit well with the experimental data.
Index Terms—insertion loss, isolation, phase control, magnetized waveguide
Cite: Junaid Zafar, Tasneem Zafar, Andrew A. Gibson, and Haroon Zafar, "Design and Analysis of an X-Band Isolator Coupled to an Accelerating Manifold," International Journal of Electronics and Electrical Engineering, Vol. 3, No. 5, pp. 385-389, October 2015. doi: 10.12720/ijeee.3.5.385-389
Cite: Junaid Zafar, Tasneem Zafar, Andrew A. Gibson, and Haroon Zafar, "Design and Analysis of an X-Band Isolator Coupled to an Accelerating Manifold," International Journal of Electronics and Electrical Engineering, Vol. 3, No. 5, pp. 385-389, October 2015. doi: 10.12720/ijeee.3.5.385-389
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