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Effects of Cs-137 Gamma and X-Ray Irradiation on the Electrical Characteristics of Silicon Diode 1N4007

N. Elsheikh 1 and F. Saboun 2
1. Center of Alternative Energies and Sustainable Development, Omdurman Ahlia University, Omdurman, Sudan
2. Department of Physics, Sudan University of Science and Technology, Khartoum, Sudan
Abstract—Experiments were carried out to study the Cs-137 gamma and X-ray induced defects in bar and shielded 1N4007 silicon diode. Cs-137 gamma-ray source and X-ray 5548 RÖNTGENGERAT APPARATUS were utilized in this work. The current-voltage (I-V) characteristics for pre and post irradiated bar and shielded 1N4007 silicon diode were recorded. In addition, the impact of Portland cement as a shielding layer was investigated. For both type of sources used, results confirmed the dependency of I-V characteristics on the type and energy of the irradiating source. On the other hand, for both sources, the presence of cement coating shield has significantly reduced the radiation-induced damage in 1N4007 silicon diode since it has shifted the I-V characteristics to near standard operating conditions (I-V characteristics for pre irradiated 1N4007 silicon diode) and approved the possibility of hardening electronics against gamma and X-ray photons.
 
Index Terms—Cs-137 gamma source, radiation-induced defects, silicon diode 1N4007, X-rays

Cite: N. Elsheikh and F. Saboun, "Effects of Cs-137 Gamma and X-Ray Irradiation on the Electrical Characteristics of Silicon Diode 1N4007," International Journal of Electronics and Electrical Engineering, Vol. 3, No. 6, pp. 497-500, December 2015. doi: 10.12720/ijeee.3.6.497-500
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