Abstract—Experiments were carried out to study the Cs-137 gamma and X-ray induced defects in bar and shielded 1N4007 silicon diode. Cs-137 gamma-ray source and X-ray 5548 RÖNTGENGERAT APPARATUS were utilized in this work. The current-voltage (I-V) characteristics for pre and post irradiated bar and shielded 1N4007 silicon diode were recorded. In addition, the impact of Portland cement as a shielding layer was investigated. For both type of sources used, results confirmed the dependency of I-V characteristics on the type and energy of the irradiating source. On the other hand, for both sources, the presence of cement coating shield has significantly reduced the radiation-induced damage in 1N4007 silicon diode since it has shifted the I-V characteristics to near standard operating conditions (I-V characteristics for pre irradiated 1N4007 silicon diode) and approved the possibility of hardening electronics against gamma and X-ray photons.

 

Index Terms—Cs-137 gamma source, radiation-induced defects, silicon diode 1N4007, X-rays

Cite: N. Elsheikh and F. Saboun, "Effects of Cs-137 Gamma and X-Ray Irradiation on the Electrical Characteristics of Silicon Diode 1N4007," International Journal of Electronics and Electrical Engineering, Vol. 3, No. 6, pp. 497-500, December 2015. doi: 10.12720/ijeee.3.6.497-500