Abstract—This research presents an application of low cost 2-D silicon Hall sensor for 2-D magnetometer that can respond to two direction of magnetic field, perpendicular and parallel field. The magnetic sensor structure is fabricated on p-type silicon substrate that has resistivity as 20-30ohm.cm by using planar silicon technology. The structure consists of five Aluminum sensitive ohmic contacts on rectangular active area with diameter of 600×300μm². The response of device was tested for two axis in magnetic flux density range 0-5,000G. Linear response was found. And as the result, sensitivity of perpendicular field was 85.182 μV/G and 29.982 μV/G for the parallel field, while the Hall voltage amplification 3,400 times is 0.291mV/G for perpendicular field and the 10,230 time is 0.307mV/G for parallel field response that was measured in magnetic flux density between 0-5,000 gauss. After that the 2-D Hall device is used for magnetometer system and was verified the calibration results comparing with standard Gaussmeter. The comparison are presents acceptable agreement. Also the coefficient of determination (R²) are computed and shown 0.9999 and 0.9998 for two axis of magnetic the response B_z and B_x respectively. Therefore, this implies the 2-D silicon Hall sensor can be developed to be a 2-D magnetometer opportunely. 

 

Index Terms—Hall sensor, 2-D Hall device, magnetometer

Cite: Athirot Mano and Wisut Titiroongruang, "2-D Magnetometer by Using Low Cost Silicon Hall Sensor," International Journal of Electronics and Electrical Engineering, Vol. 4, No. 5, pp. 435-438, October 2016. doi: 10.18178/ijeee.4.5.435-438