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RF MEMS Perforated Shunt Switch Design on Hafnium Oxide Substrate for Low Actuation Voltage

Ankur Saxena 1 and Vimal Kumar Agrawal 2
1. Electronics & Communication, Jaipur, India
2. Apex Institute of Engg. & Technology, Electronics & Communication, Jaipur, India
Abstract—Microelectronic Mechanical System (MEMS) is technology is developed for pressure and temperature sensors, accelerometers, gas chromatographs and others sensor device. RF MEMS have two switch operation classified in two parts i.e. actuation section and electrical section. This paper represents the switch electrostatic section with capacitive shunt configuration. The perforated MEMS switch is design on substrate of hafnium oxide material. The hafnium oxide is high dielectric constant material which having very low crystallization temperature. The perforation is method which reduced actuation voltage, power consumption and increased the switching speed. The Fixed-fixed beam is capacitive shunt type switch. The concept of paper that reduced low actuation voltage, higher flexibility, reduced squeeze film damping and higher switching speed. The perforation geometry used in switch are octagon, hexagon, pentagon and rectangular. The various type perforated switch is designed and simulated. The design and simulation of switch is used software COMSOL® MULTIPHYSICS 4.3b.
 
Index Terms—RF MEMS, hafnium oxide, serpentine square, perforation, actuation voltage

Cite: Ankur Saxena and Vimal Kumar Agrawal, "RF MEMS Perforated Shunt Switch Design on Hafnium Oxide Substrate for Low Actuation Voltage," International Journal of Electronics and Electrical Engineering, Vol. 4, No. 6, pp. 500-504, December 2016. doi: 10.18178/ijeee.4.6.500-504
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