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ESD with Line Length in TFT-LCD Circuits

Jingang Hao, Qi Xu, Lu Tian, and Dongsheng Huang
Beijing BOE Optoelectronics Technology Co., Ltd., Beijing, China
Abstract—In the circuit of semiconductor, ESD usually occurred between two lines which are closed to each other. To study the how to improve the anti-ESD of current design, the test lines for both first gate ad last gate are compared. The two test lines go cross over another line but they are different length. The products were exposed to the same rich-static environment to test their anti-ESD ability. Result shows that the longer the line is, the more possibilities of the ESD is, especially when the length difference exceeds 14%. The result would direct the design of the micro circuit by dividing long line into several short-line of semiconductor, which would reduce the probability of ESD.
 
Index Terms—ESD, test line, microelectronics, TFT-LCD, peripheral circuit

Cite: Jingang Hao, Qi Xu, Lu Tian, and Dongsheng Huang, "ESD with Line Length in TFT-LCD Circuits," International Journal of Electronics and Electrical Engineering, Vol. 5, No. 1, pp. 71-75, February 2017. doi: 10.18178/ijeee.5.1.71-75
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