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Modeling Subthreshold Slope and DIBL in Quasi-Ballistic Surrounding Gate MOSFEs

Maryam Esmaeili and Seyed Amir Hashemi
Faculty of Engineering, Shahrekord University, Shahrekord, Iran
Abstract—This work presents an analytical quasi-ballistic model for Surrounding Gate (SRG) MOSFETs. It is assumed that the charges have ballistic (which is constant along the channel) and diffusive (which depends on the location along the channel) components. Using the Mckelvey’s flux theory, the ballistic component of the current is calculated. Also, using the concept of mean free path, total channel current is calculated from the ballistic component. Then, the extracted current model is used to model the DIBL and Subthreshold Slope (SS) of the device analytically. It is shown that if the device is ballistic, changing the channel length and biases will not alter the DIBL and SS considerably and they remain nearly constant. The SS will be around its ideal value, 60mV/dec. This behavior of the ballistic devices is useful in designing the fabrication process. 
 
Index Terms—ballistic, drift-diffusive, DIBL, subthreshold, surrounding gate MOSFET

Cite: Maryam Esmaeili and Seyed Amir Hashemi, "Modeling Subthreshold Slope and DIBL in Quasi-Ballistic Surrounding Gate MOSFEs," International Journal of Electronics and Electrical Engineering, Vol. 6, No. 3, pp. 48-52, September 2018. doi: 10.18178/ijeee.6.3.48-52
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