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Li-doped ZnO Piezoelectric Sensor for Touchscreen Applications

Chun-Cheng Lin
Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan
Abstract—Piezoelectric sensors based on highly (002)-oriented Li-doped Zinc Oxide (LZO) thin films are fabricated on Pt/Ti/SiO2/Si substrates using a Radio Frequency (RF) magnetron sputtering technique with DC-bias voltages ranging from 0 ~ 25 V. The DC-bias voltage modifies the microstructure and thickness uniformity of the LZO films, and therefore changes their piezoelectric properties. The optimal value of the piezoelectric coefficient is obtained for a DC-bias of 20 V. The observation results suggest that the superior piezoelectric property is the result of an improved crystallization of the LZO film rather than a greater thickness uniformity. The feasibility of the optimal LZO-based piezoelectric sensor for touchscreen applications is demonstrated by means of a simple experiment. 
Index Terms—DC-bias, Li-doped, piezoelectric, sensor, touchscreen, zinc oxide (ZnO)

Cite: Chun-Cheng Lin, "Li-doped ZnO Piezoelectric Sensor for Touchscreen Applications," International Journal of Electronics and Electrical Engineering, Vol. 6, No. 4, pp. 53-56, December 2018. doi: 10.18178/ijeee.6.4.53-56
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