Abstract—This research focuses on the integration of conventional silicon electronics with Nanostructured materials for an improved efficiency in the detection of photons applied in Fibre Optic Communications. The PIN starting material, intrinsic region thickness and packaging technology determines the diode performance. Nanostructured materials are processed using different techniques such as ion beam sputtering, layer-by-layer deposition, Nano Milling/Etching System, spin casting, ion beam deposition etc. This research utilizes the unique effects of the wide range of phenomena offered by Nanostructured materials such as plasmonic enhancement of absorption, ultraviolet light absorption, generation of multiexciton, charge storage in surface and interface traps, and size–based spectral tuning, to improve the functions of the intrinsic region of the P-I-N diode. The traps extend the lifetime of non-circulating carriers thereby increasing gain. The presence of an introduced external electromagnetic field shifts free conduction electrons. Other achieved advantages include a very negligible package parasitic effect, negligible contact resistance, and a package inductance on the order of 0.01nH for the P-I-N diode.

Index Terms—PIN diode, nanostructure, nanoparticles, plasmon resonance, scattering

Cite: Uzoma I. Oduah, "The Application of a Nanostructured Material in the Fabrication of a P-I-N Diode Chip," International Journal of Electronics and Electrical Engineering, Vol. 2, No. 1, pp. 36-40, March 2014. doi: 10.12720/ijeee.2.1.36-40