Comparison of Total Ionizing Dose Effects for Floating and Tied Body SOI nMOSFETs
Bingxu. Ning and Zhengxuan. Zhang
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
Abstract—The comparison of total ionizing dose (TID) effects for floating body (FB) and tied body (TB) partially depleted (PD) SOI nMOSFETs is presented. The TB device shows enhanced back-gate threshold voltage shift under OFF bias condition. The simulation results indicate that, under OFF bias condition, the electric field lines distributed in the buried oxide (BOX) basically turn up from the drain to the substrate for FB device, while they largely turn up from the drain to the body with higher efficiency of charge trapping for TB device. It is further confirmed by the distinct simulated potential in the body region and strength of the electric field in the BOX.
Index Terms—total ionizing dose, threshold voltage shift, charge trapping, PD SOI nMOSFET
Cite: Bingxu. Ning and Zhengxuan. Zhang, "Comparison of Total Ionizing Dose Effects for Floating and Tied Body SOI nMOSFETs," International Journal of Electronics and Electrical Engineering, Vol. 1, No. 1, pp. 31-33, March 2013. doi: 10.12720/ijeee.1.1.31-33
Index Terms—total ionizing dose, threshold voltage shift, charge trapping, PD SOI nMOSFET
Cite: Bingxu. Ning and Zhengxuan. Zhang, "Comparison of Total Ionizing Dose Effects for Floating and Tied Body SOI nMOSFETs," International Journal of Electronics and Electrical Engineering, Vol. 1, No. 1, pp. 31-33, March 2013. doi: 10.12720/ijeee.1.1.31-33
Array